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参数资料
| 型号： | 2SK2075-E |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 250 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-65, TO-3P, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 83K |
| 代理商： | 2SK2075-E |
2SK2075
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
250
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
20
A
Drain peak current
ID(pulse)*
1
80
A
Body to drain diode reverse drain current
IDR
20
A
Channel dissipation
Pch*
2
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
250
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±30
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±25 V, VDS = 0
Zero gate voltage drain current
IDSS
—
250
A
VDS = 200 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
0.105
0.13
ID = 10 A, VGS = 10 V*
3
Forward transfer admittance
|yfs|
9
14
—
S
ID = 10 A, VDS = 10 V*
3
Input capacitance
Ciss
—
2400
—
pF
Output capacitance
Coss
—
970
—
pF
Reverse transfer capacitance
Crss
—
145
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
30
—
ns
Rise time
tr
—
110
—
ns
Turn-off delay time
td(off)
—
220
—
ns
Fall time
tf
—
95
—
ns
ID = 10 A, VGS = 10 V,
RL = 3
Body to drain diode forward voltage
VDF
—
1.3
—
V
IF = 20 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
330
—
ns
IF = 20 A, VGS = 0,
diF / dt = 100 A /
s
Note:
3. Pulse Test
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