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参数资料
| 型号： | 2SK2075-E |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 250 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-65, TO-3P, 3 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 83K |
| 代理商： | 2SK2075-E |
2SK2075
Rev.2.00 Sep 07, 2005 page 4 of 6
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State
Resistance vs. Temperature
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
Forward Transfer Admittance
vs. Drain Current
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body to Drain Diode Reverse
Recovery Time
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
Gate
to
Source
Voltage
V
GS
(V)
Drain Current ID (A)
Switching
Time
t
(ns)
Switching Characteristics
0.5
0.4
0.3
0.2
0.1
–40
0
40
80
120
160
0
5 A
ID = 20 A
Pulse Test
10 A
100
30
10
3
1
0.3
0.1
0.3
1
3
10
30
100
–25
°C
Tc = 25
°C
75
°C
VDS = 10 V
Pulse Test
5
10
500
200
100
50
20
0.05 0.1
0.2
0.5
10
20
50
di / dt = 100 A /
s
VGS = 0, Ta = 25°C
10000
1000
100
10
010
20
30
40
50
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
500
400
300
200
100
0
20
40
60
80
100
20
16
12
8
4
0
VDD = 50 V
100 V
200 V
VDD = 200 V
100 V
50 V
ID = 20 A
VGS
VDS
500
200
100
50
20
10
5
0.5
1
2
5
10
20
50
tf
tr
td(off)
td(on)
VGS = 10 V, VDD = 30 V
PW = 5
s, duty < 1 %
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| 2SK2076-15 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 600UA I(DSS) | SOT-346 |
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