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参数资料
| 型号： | 2SK2096 |
| 元件分类： | JFETs |
| 英文描述： | 45 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 5/9页 |
| 文件大小： | 51K |
| 代理商： | 2SK2096 |
2SK2096
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
A
V
DS = 50 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.25
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.018
0.022
I
D = 25 A
V
GS = 10 V*
1
—
0.023
0.028
I
D = 25 A
V
GS = 4 V*
1
Forward transfer admittance
|y
fs|25
37
—
S
I
D = 25 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
3530
—
pF
V
DS = 10 V
Output capacitance
Coss
—
1480
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
300
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
33
—
ns
I
D = 25 A
Rise time
t
r
—
160
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
450
—
ns
R
L = 1.5
Fall time
t
f
—
230
—
ns
Body to drain diode forward
voltage
V
DF
—
1.3
—
V
I
F = 45 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
130
—
ns
I
F = 45 A, VGS = 0,
di
F / dt = 50 A / s
Note
1. Pulse Test
See characteristic curve of 2SK1911.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2096-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2097 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2098 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:N-channel MOS-FET |
| 2SK2098-01M | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-220AB |
| 2SK2098-01MR | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:N-channel MOS-FET |
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