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参数资料
| 型号： | 2SK2096 |
| 元件分类： | JFETs |
| 英文描述： | 45 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 6/9页 |
| 文件大小： | 51K |
| 代理商： | 2SK2096 |
2SK2096
4
160
120
80
40
0
Channel
Dissipation
Pch
(W)
50
100
150
200
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
500
300
100
30
10
3
1
0.5
0.1
0.3
1
3
10
30
100
s
10
s
1 ms
PW
=
10
ms
(1shot)
DC
Operation
(Tc
=
25
°C)
Operation in
this area is
limited by R DS(on)
Ta = 25 °C
200
160
120
80
40
Channel Temperature Tch (°C)
Repetive
Avalanche
Energy
E
(mJ)
AR
Maximun Avalanche Energy vs.
Channel Temperature Derating
25
50
75
100
125
150
0
I
= 45 A
V
= 25 V
duty < 0.1 %
Rg > 50
AP
DD
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PDF描述 |
|---|---|
| 2SK2109 | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK211-O | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236 |
| 2SK211 | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236 |
| 2SK211-Y | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236 |
| 2SK2114-E | 5 A, 450 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2096-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2097 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2098 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:N-channel MOS-FET |
| 2SK2098-01M | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-220AB |
| 2SK2098-01MR | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:N-channel MOS-FET |
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