参数资料
型号: 2SK216-E
元件分类: JFETs
英文描述: 0.5 A, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: SC-46, 3 PIN
文件页数: 2/4页
文件大小: 65K
代理商: 2SK216-E
2SK213, 2SK214, 2SK215, 2SK216
Rev.2.00 Sep 07, 2005 page 2 of 5
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
2SK213
140
2SK214
160
2SK215
180
Drain to source voltage
2SK216
VDSX
200
V
Gate to source voltage
VGSS
±15
V
Drain current
ID
500
mA
Body to drain diode reverse drain current
IDR
500
mA
Pch
1.75
W
Channel dissipation
Pch*
1
30
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–45 to +150
°C
Note:
1. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
2SK213
140
V
2SK214
160
V
2SK215
180
V
Drain to source breakdown
voltage
2SK216
V(BR)DSX
200
V
ID = 1 mA, VGS = –2 V
Gate to source breakdown voltage
V(BR)GSS
±15
V
IG = ±10 A, VDS = 0
Gate to source voltage
VGS(on)
0.2
1.5
V
ID = 10 mA, VDS = 10 V *
2
Drain to source saturation voltage
VDS(sat)
2.0
V
ID = 10 mA, VGD = 0 *
2
Forward transfer admittance
|yfs|
20
40
mS
ID = 10 mA, VDS = 20 V *
2
Input capacitance
Ciss
90
pF
Reverse transfer capacitance
Crss
2.2
pF
ID = 10 mA, VDS = 10 V,
f = 1 MHz
Note:
2. Pulse test
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2SK2131-AZ 15 A, 150 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
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相关代理商/技术参数
参数描述
2SK216K 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500MA I(D) | TO-220AB
2SK217 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel Junction FET
2SK2170 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Impedance Converter Applications
2SK2171 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High-Frequency, High-Frequency Amp Analog Switch Applications
2SK2173 功能描述:MOSFET N-CH 60V 50A TO-3PN RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件