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参数资料
| 型号： | 2SK2170 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 20 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | SMCP, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 31K |
| 代理商： | 2SK2170 |
2SK2170
No.4858-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN4858A
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
D1503 TS IM / 71599TH(KT) / 32295TS(KOTO) TA-00735
2SK2170
N-Channel Junction Silicon FET
Impedance Converter Applications
Applications
Low-frequency amplifier, analog switch, constant current source.
Features
Ultrasmall-sized package permitting 2SK2170 applied sets to be made small and slim.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSX
30
V
Gate-to-Drain Voltage
VGDS
--30
V
Gate Current
IG
10
mA
Drain Current
ID
20
mA
Allowable Power Dissipation
PD
100
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gate-to-Drain Breakdown Voltage
V(BR)GDS
IG=--10A, VDS=0
--30
V
Gate-to-Source Leakage Current
IGSS
VGS=--20V, VDS=0
--1.0
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1A
--0.2
--0.7
--2.5
V
Zero-Gate Voltage Drain Current
IDSS
VDS=10V, VGS=0
1.2
4.0
mA
Forward Transfer Admittance
yfs
VDS=10V, VGS=0, f=1kHz
2.5
5.0
mS
Input Capacitance
Ciss
VDS=10V, VGS=0, f=1kHz
5.0
pF
Reverse Transfer Capacitance
Crss
VDS=10V, VGS=0, f=1kHz
0.9
pF
Static Drain-to-Source ON-State Resistance
RDS(on)
VDS=10mV, VGS=0
250
Marking : JA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2171 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High-Frequency, High-Frequency Amp Analog Switch Applications |
| 2SK2173 | 功能描述:MOSFET N-CH 60V 50A TO-3PN RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK2173(F) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 60V 50A 3PIN TO-3P(W) - Rail/Tube |
| 2SK2173_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications |
| 2SK2173_09 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Chopper Regulator, DC−DC Converter and Motor Drive |
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