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| 型号： | 2SK2394 |
| 厂商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N-Channel Junction Silicon FET for Low-Noise HF Amplifier Applications(低噪声 HF放大器应用的N沟道结型场效应管) |
| 中文描述： | N沟道结硅场效应管，高频低噪声放大器的应用（低噪声高频放大器应用的?沟道结型场效应管） |
| 文件页数： | 1/3页 |
| 文件大小： | 111K |
| 代理商： | 2SK2394 |
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Junction Silicon FET
2SK2394
Low-Noise HF Amplifier Applications
Ordering number:EN4839A
22299TS/73094MT (KOTO) BX-1128 No.4839–1/3
0.4
0.95 0.95
1.9
2.9
0
1
2
0
0.16
0 to 0.1
0
1
2
3
1
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2050A
[2SK2394]
Applications
· AM tuner RF amplifier.
· Low-noise amplifier.
Features
· Large
y
fs
.
· Small Ciss.
· Small-sized package permitting 2SK2394-applied
sets to be made small slim.
· Ultralow noise figure.
C
C
Electrical Characteristics
at Ta = 25C
1 : Source
2 : Drain
3 : Gate
SANYO : CP
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* : The 2SK2394 is classified by I
DSS
as follows : (unit : mA)
Marking : YJ
I
DSS
rank : 5, 6, 7
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2394_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Junction Silicon FET Low-Noise HF Amplifi er Applications |
| 2SK2394-6-TB-E | 功能描述:JFET N-CH 15V 50MA CP RoHS:是 类别:分离式半导体产品 >> JFET（结点场效应 系列:- 标准包装:8,000 系列:- 电流 - 漏极(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏极至源极电压(Vdss):30V 漏极电流 (Id) - 最大:10mA FET 型:N 沟道 电压 - 击穿 (V(BR)GSS):- 电压 - 切断 (VGS 关）@ Id:180mV @ 1µA 输入电容 (Ciss) @ Vds:4pF @ 10V 电阻 - RDS（开）:200 欧姆 安装类型:表面贴装 包装:带卷 (TR) 封装/外壳:3-XFDFN 供应商设备封装:3-ECSP1006 功率 - 最大:100mW |
| 2SK2394-7-TB-E | 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2SK2395 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Low-Noise HF Amp Applications |
| 2SK2395F | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | 50MA I(D) | SPAK |
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