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参数资料
| 型号： | 2SK2466 |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-67, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 420K |
| 代理商： | 2SK2466 |
2SK2466
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
A
Drain cutoff current
IDSS
VDS = 100 V, VGS = 0 V
—
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
100
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
—
2.0
V
VGS = 4 V, ID = 15 A
—
40
70
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 15 A
—
34
46
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 15 A
13
30
—
S
Input capacitance
Ciss
—
3250
—
Reverse transfer capacitance
Crss
—
230
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
520
—
pF
Rise time
tr
—
33
—
Turnon time
ton
—
60
—
Fall time
tf
—
95
—
Switching time
Turnoff time
toff
—
230
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
68
—
Gatesource charge
Qgs
—
46
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 80 V, VGS = 10 V, ID = 30 A
—
22
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
30
A
Pulse drain reverse current
(Note 1)
IDRP
—
120
A
Forward voltage (diode)
VDSF
IDR = 30 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
120
—
ns
Reverse recovery charge
Qrr
IDR = 30 A, VGS = 0 V
dIDR / dt = 50 A / s
—
280
—
C
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K2466
Part No. (or abbreviation code)
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PDF描述 |
|---|---|
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| 2SK2476-AZ | 3 A, 800 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 2SK2476 | 3 A, 800 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 2SK2478-AZ | 2 A, 900 V, 7.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 2SK2480-AZ | 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2467 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) |
| 2SK2467_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type High-Power Amplifier Application |
| 2SK2467Y | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 9A I(D) | TO-247VAR |
| 2SK2467-Y | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 180V 9A 3PIN TO-3P - Rail/Tube |
| 2SK2469-01MR | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:N-channel MOS-FET |
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