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参数资料
| 型号： | 2SK246 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 封装： | 2-5F1C, SC-43, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 229K |
| 代理商： | 2SK246 |
2SK246
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK246
For Constant Current, Impedance
Converter and DC-AC High Input
Impedance Amplifier Circuit Applications
High breakdown voltage: VGDS = 50 V
High input impedance: IGSS = 1 nA (max) (VGS = 30 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
50
V
Gate current
IG
10
mA
Drain power dissipation
PD
300
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = 30 V, VDS = 0
1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = 100 μA
50
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
1.2
14
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 μA
0.7
6.0
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
1.5
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
9.0
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
2.5
pF
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1C
Weight: 0.21 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2461-AZ | 20 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 2SK2461 | 20 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2462 | 15 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 2SK2462-AZ | 15 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 2SK2467-Y | 9 A, 180 V, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK246(F) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR, TO92, 2SK246(F) |
| 2SK246_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel Junction Type For Constant Current, Impedance |
| 2SK2460 | 制造商:ROHM Semiconductor 功能描述: |
| 2SK2460N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 5A I(D) | TO-220AB |
| 2SK2461 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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