参数资料
型号: 2SK2487-A
元件分类: JFETs
英文描述: 8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: MP-88, 3 PIN
文件页数: 2/7页
文件大小: 115K
代理商: 2SK2487-A
2SK2487
2
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-Resistance
RDS (on)
1.1
1.6
VGS = 10 V, ID = 4.0 A
Gate to Source Cutoff Voltage
VGS (off)
2.5
3.5
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs |
3.0
VDS = 20 V, ID = 4.0 A
Drain Leakage Current
IDSS
100
VDS = VDSS, VGS = 0
Gate to Source Leakage Current
IGSS
±100
VGS =
±30 V, VDS = 0
Input Capacitance
Ciss
2 100
VDS = 10 V
Output Capacitance
Coss
310
VGS = 0
Reverse Transfer Capacitance
Crss
60
f = 1 MHz
Turn-On Delay Time
td (on)
30
ID = 4.0 A
Rise Time
tr
20
VGS = 10 V
Turn-Off Delay Time
td (off)
130
VDD = 150 V
Fall Time
tf
23
RG = 10
Total Gate Charge
QG
65
ID = 8.0 A
Gate to Source Charge
QGS
11
VDD = 450 V
Gate to Drain Charge
QGD
29
VGS = 10 V
Body Diode Forward Voltage
VF (S-D)
1.0
IF = 8.0 A, VGS = 0
Reverse Recovery Time
trr
770
IF = 8.0 A, VGS = 0
Reverse Recovery Charge
Qrr
5.0
di/dt = 50 A/
s
UNIT
V
S
A
nA
pF
ns
nC
V
ns
C
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
Test Circuit 3 Gate Charge
VGS = 20 - 0 V
PG
RG = 25
50
D.U.T.
L
VDD
Test Circuit 1 Avalanche Capability
PG.
RG = 10
D.U.T.
RL
VDD
Test Circuit 2 Switching Time
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
t = 1 us
Duty Cycle
≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
ID
10 %
0
90 %
10 %
VGS (on)
ID
ton
toff
td (on)
tr
td (off)
tf
t
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