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参数资料
| 型号： | 2SK2487-A |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MP-88, 3 PIN |
| 文件页数： | 5/7页 |
| 文件大小： | 115K |
| 代理商： | 2SK2487-A |
2SK2487
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VSD - Source to Drain Voltage - V
ISD
-
Diode
Forward
Current
-
A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
1.0
0.1
0
–50
1.0
0
50
100
150
VGS = 10 V
ID = 4 A
0.1
0
1
10
100
0.5
Pulsed
10
1.0
100
1 000
10 000
10
100
1 000
VGS = 0
f = 1 MHz
10
100
1 000
1.0
10
100
V
GS
-
Gate
to
Source
Voltage
-
V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
ID - Drain Current - A
trr
-
Reverse
Recovery
time
-
ns
di/dt = 50 A/ s
VGS = 0
10
0.1
100
1 000
1.0
10
100
1.0
1.5
VDD = 150 V
VGS = 10 V
RG = 10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Qg - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
0
20
40
60
80
200
400
600
800
2
4
6
8
10
12
14
16
0
2.0
3.0
4.0
Ciss
Crss
Coss
VDD = 450 V
300 V
150 V
VGS
VDS
tr
td(on)
tf
td(off)
VGS = 10 V
VGS = 0V
10 000
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2487 | 8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2489-4062 | 10 A, 180 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SA1877-4061 | 5 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2SA1795-4071 | 5 A, 40 V, PNP, Si, POWER TRANSISTOR |
| 2SA1795-4061 | 5 A, 40 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2488 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK2488-A | 制造商:Renesas Electronics 功能描述:Nch 900V 10A 1200m@10V TO3P Bulk |
| 2SK2489 | 制造商:SHINDENGEN 制造商全称:Shindengen Electric Mfg.Co.Ltd 功能描述:VZ Series Power MOSFET(180V 10A) |
| 2SK2489-7100 | 制造商:Shindengen 功能描述: |
| 2SK2489-7102 | 制造商:Shindengen Electric Mfg 功能描述:Cut Tape |
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