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参数资料
| 型号： | 2SK2582 |
| 元件分类： | JFETs |
| 英文描述： | 0.4 ohm, POWER, FET, TO-220AB |
| 文件页数： | 3/6页 |
| 文件大小： | 29K |
| 代理商： | 2SK2582 |
2SK2582
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
350
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
AV
DS =350 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.30
0.40
I
D = 7 A
V
GS = 10 V*
1
Forward transfer admittance
|y
fs|
5.0
9.0
—
S
I
D = 7 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
1250
—
pF
V
DS = 10 V
Output capacitance
Coss
—
420
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
70
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
15
—
ns
I
D = 7 A
Rise time
t
r
—
70
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
100
—
ns
R
L = 3.75
Fall time
t
f
—52—ns
Body to drain diode forward
voltage
V
DF
—
1.0
—
V
I
F = 13 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
350
—
ns
I
F = 13 A, VGS = 0,
di
F / dt = 100 A / s
Note
1. Pulse Test
See characteristics curves of 2SK1401A
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PDF描述 |
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| 2SK2593R | 30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2586 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2586(E) | 制造商:Renesas Electronics 功能描述:Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-3P Magazine |
| 2SK2586-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-3P Magazine Tray 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,60A,7ohm,TO-3P |
| 2SK2588 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK258H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-3 |
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