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参数资料
| 型号： | 2SK2596 |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | UPAK-3 |
| 文件页数： | 2/7页 |
| 文件大小： | 34K |
| 代理商： | 2SK2596 |
2SK2596
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
17
V
Gate to source voltage
V
GSS
±10
V
Drain current
I
D
0.4
A
Drain peak current
I
D(pulse)*
1
1A
Channel dissipation
Pch*
2
3W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–45 to +150
°C
Notes: 1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min.
Typ
Max.
Unit
Test Conditions
Zero gate voltage drain
current
I
DSS
——
10
AV
DS = 12 V, VGS = 0
Gate to source leak current
I
GSS
——
±5.0
AV
GS = ±10V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
0.4
—
1.1
V
I
D = 2mA, VDS = 12V
Input capacitance
Ciss
—
22
—
pF
V
GS = 5V, VDS = 0
f = 1MHz
Output capacitance
Coss
—
10.5
—
pF
V
DS = 12V, VGS = 0
f = 1MHz
Output Power
Pout
30.2
31.46
—
dBm
V
DS = 12V
f = 836.5MHz
Pin = 18dBm
Drain Rational
ηD45
55
—
%
V
DS = 12V
Pout = 30.2dBm
f = 836.5MHz
Pin = 18dBm
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PDF描述 |
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| 2SK2606 | 8 A, 800 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2624FG | 3.5 A, 600 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2596_07 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK2596BX | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK2596BXTL-E | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH - Bulk |
| 2SK2597 | 制造商:NEC 制造商全称:NEC 功能描述:N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
| 2SK2598 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) |
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