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参数资料
| 型号： | 2SK2606 |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 800 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-16F1B, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 147K |
| 代理商： | 2SK2606 |
2SK2606
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSIII)
2SK2606
DCDC Converter, Relay Drive and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 1.0 (typ.)
High forward transfer admittance : |Yfs|= 7.0 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 640 V)
Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
800
V
Draingate voltage (RGS = 20 k)
VDGR
800
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
8
A
Drain current
Pulse (Note 1)
IDP
24
A
Drain power dissipation (Tc = 25°C)
PD
85
W
Single pulse avalanche energy
(Note 2)
EAS
883
mJ
Avalanche current
IAR
8
A
Repetitive avalanche energy (Note 3)
EAR
8.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
1.47
°C / W
Thermal resistance, channel to ambient
Rth (cha)
41.6
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 25.0 mH, IAR = 8 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2606(F) | 功能描述:MOSFET MOSFET N-Ch 800V 8A Rdson 1.2 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2607 | 功能描述:MOSFET N-CH 800V 9A TO-3PN RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK2607(F) | 制造商:Toshiba 功能描述:Nch 800V 9A 1.2@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N TO-3P 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, TO-3P 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W ;RoHS Compliant: Yes 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Nch,800V/9A/1.2ohm,TO-3P(N) |
| 2SK2607(F,T) | 功能描述:MOSFET N-Ch FET RDS 1.0 Ohm IDSS 100uA VDS 640V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2607 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N TO-3P |
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