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参数资料
| 型号： | 2SK2606 |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 800 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-16F1B, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 147K |
| 代理商： | 2SK2606 |
2SK2606
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
—
±10
μA
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 640 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
800
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 4 A
—
1.0
1.2
Forward transfer admittance
|Yfs|
VDS = 15 V, ID = 4 A
3.0
7.0
—
S
Input capacitance
Ciss
—
2160
—
Reverse transfer capacitance
Crss
—
45
—
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
—
200
—
pF
Rise time
tr
—
25
—
Turnon time
ton
—
60
—
Fall time
tf
—
25
—
Switching time
Turnoff time
toff
—
110
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
68
—
Gatesource charge
Qgs
—
38
—
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 8 A
—
30
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
8
A
Pulse drain reverse current
(Note 1)
IDRP
—
24
A
Forward voltage (diode)
VDSF
IDR = 8 A, VGS = 0 V
—
1.9
V
Reverse recovery time
trr
—
1500
—
ns
Reverse recovery charge
Qrr
IDR = 8 A, VGS = 0 V, dIDR / dt = 100 A / μs
—
19
—
μC
Marking
K2606
TOSHIBA
Lot No.
Note 4
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2606(F) | 功能描述:MOSFET MOSFET N-Ch 800V 8A Rdson 1.2 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2607 | 功能描述:MOSFET N-CH 800V 9A TO-3PN RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK2607(F) | 制造商:Toshiba 功能描述:Nch 800V 9A 1.2@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N TO-3P 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, TO-3P 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W ;RoHS Compliant: Yes 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Nch,800V/9A/1.2ohm,TO-3P(N) |
| 2SK2607(F,T) | 功能描述:MOSFET N-Ch FET RDS 1.0 Ohm IDSS 100uA VDS 640V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2607 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N TO-3P |
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