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参数资料
| 型号： | 2SK2601 |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 500 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, 2-16C1B, SC-65, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 419K |
| 代理商： | 2SK2601 |
2SK2601
2010-01-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
—
±10
μA
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 500 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drainsource ON-resistance
RDS (ON)
VGS = 10 V, ID = 5 A,
—
0.56
1.0
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 5 A
3.5
7.0
—
S
Input capacitance
Ciss
—
1200
—
Reverse transfer capacitance
Crss
—
200
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
550
—
pF
Rise time
tr
—
30
—
Turnon time
ton
—
50
—
Fall time
tf
—
45
—
Switching time
Turnoff time
toff
—
180
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
30
—
Gatesource charge
Qgs
—
15
—
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 10 A
—
15
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
10
A
Pulse drain reverse current
(Note 1)
IDRP
—
40
A
Forward voltage (diode)
VDSF
IDR = 10 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
500
—
ns
Reverse recovery charge
Qrr
IDR = 10 A, VGS = 0 V
dIDR / dt = 100 A / μs
—
4.3
—
μC
Marking
K2601
TOSHIBA
Lot No.
Note 4
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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PDF描述 |
|---|---|
| 2SK2610 | 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2617ALS | 5 A, 500 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2624ALS | 3.5 A, 600 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2631TP-FA | 1000 mA, 800 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2631TP-FA | 1000 mA, 800 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2601(F) | 制造商:Toshiba 功能描述:Nch 500V 10A 1@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 10A TO-3PN |
| 2SK2602 | 功能描述:MOSFET N-CH 600V 6A TO-3PN RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK2602(F,T) | 功能描述:MOSFET MOSFET N-Ch 600V 6A Rdson 1.25 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2603 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 800V 3A 3PIN TO-220 - Rail/Tube |
| 2SK2603(F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 800V 3A TO-220AB |
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