型号: | 2SK2614(2-7B1B) |
元件分类: | JFETs |
英文描述: | 20 A, 50 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET |
封装: | SC-64, 3 PIN |
文件页数: | 1/2页 |
文件大小: | 131K |
代理商: | 2SK2614(2-7B1B) |
相关PDF资料 |
PDF描述 |
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2SK2618ALS | 6.5 A, 500 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
2SK2621 | 12 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PB |
2SK2622 | 14 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PB |
2SK2624LS | 3 A, 600 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
2SK2629 | 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PB |
相关代理商/技术参数 |
参数描述 |
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2SK2614TE16L1 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 50V 20A 3PIN DP - Rail/Tube |
2SK2615(F) | 制造商:Toshiba 功能描述:Nch 60V 2A 0.3@10V PW-Mini(4.6 x 4.2) Bulk 制造商:Toshiba 功能描述:Trans MOSFET N-CH 60V 2A 4-Pin(3+Tab) PW-Mini |
2SK2615(TE12L,F) | 功能描述:MOSFET N-Ch FET RDS .23 Ohm IDSS 100uA VDS 60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
2SK2615TE12LF | 制造商:Toshiba America Electronic Components 功能描述:FIELD EFFECT TRANSISTOR NOPB |
2SK2617ALS | 制造商:SANYO 功能描述:Nch 500V 1.2(15V)A 1.6@15V TO220FI Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 500V 5A TO220F |