- 您现在的位置：买卖IC网 > PDF目录48161 > 2SK2614(2-7B5B) 20 A, 50 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SK2614(2-7B5B) |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 50 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-7B5B, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 267K |
| 代理商： | 2SK2614(2-7B5B) |
2SK2614
2004-08-30
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
2πMOSV)
2SK2614
Chopper Regulator, DCDC Converter and Motor Drive
Applications
4 V gate drive
Low drainsource ON resistance
: RDS (ON) = 0.032 (typ.)
High forward transfer admittance
: |Yfs| = 13S (typ.)
Low leakage current : IDSS = 100 A (max) (VDS = 50 V)
Enhancementmode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
3.125
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
125
°C / W
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B5B
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7B7B
Weight: 0.36 g (typ.)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
50
V
Draingate voltage (RGS = 20 k)
VDGR
50
V
Gatesource voltage
VGSS
±20
V
DC (Note 1)
ID
20
A
Drain current
Pulse (Note 1)
IDP
50
A
Drain power dissipation (Tc = 25°C)
PD
40
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2723 | 25 A, 60 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2802 | SMALL SIGNAL, FET |
| 2SK2846 | 2 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2854 | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 2SK2914 | 7.5 A, 250 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2614TE16L1 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 50V 20A 3PIN DP - Rail/Tube |
| 2SK2615(F) | 制造商:Toshiba 功能描述:Nch 60V 2A 0.3@10V PW-Mini(4.6 x 4.2) Bulk 制造商:Toshiba 功能描述:Trans MOSFET N-CH 60V 2A 4-Pin(3+Tab) PW-Mini |
| 2SK2615(TE12L,F) | 功能描述:MOSFET N-Ch FET RDS .23 Ohm IDSS 100uA VDS 60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2615TE12LF | 制造商:Toshiba America Electronic Components 功能描述:FIELD EFFECT TRANSISTOR NOPB |
| 2SK2617ALS | 制造商:SANYO 功能描述:Nch 500V 1.2(15V)A 1.6@15V TO220FI Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 500V 5A TO220F |
发布紧急采购，3分钟左右您将得到回复。