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参数资料
| 型号： | 2SK2724 |
| 元件分类： | JFETs |
| 英文描述： | 35 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 83K |
| 代理商： | 2SK2724 |
2SK2724
2
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Drain to Source On-State Resistance
RDS(on)1
VGS = 10 V, ID = 18 A
20
27
m
RDS(on)2
VGS = 4 V, ID = 18 A
33
40
m
Gate to Source Cutoff Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
1.5
2.0
V
Forward Transfer Admittance
|yfs|VDS = 10 V, ID = 18 A
10
23
S
Drain Leakage Current
IDSS
VDS = 60 V, VGS = 0
10
A
Gate to Source Leakage Current
IGSS
VGS =
±20 V, VDS = 0
±10
A
Input Capacitance
Ciss
VDS = 10 V,
1 200
pF
Output Capacitance
Coss
VGS = 0,
570
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
270
pF
Turn-On Delay Time
td(on)
ID = 18 A,
35
ns
Rise Time
tr
VGS(on) = 10 V,
280
ns
Turn-Off Delay Time
td(off)
VDD = 30 V,
160
ns
Fall Time
tf
RG = 10
170
ns
Total Gate Charge
QG
ID = 35 A,
50
nC
Gate to Source Charge
QGS
VDD = 48 V,
5.0
nC
Gate to Drain Charge
QGD
VGS = 10 V
22
nC
Body Diode Forward Voltage
VF(S-D)
IF = 35 A, VGS = 0
1.0
V
Reverse Recovery Time
trr
IF = 35 A, VGS = 0,
70
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
130
nC
Test Circuit 1 Switching Time
Test Circuit 2 Gate Charge
D.U.T.
RL
VDD
RG
PG.
RG = 10
VGS
0
t
VGS
Wave Form
ID
Wave Form
VGS
ID
10 %
0
VGS(on)
90 %
10 %
0
10 %
ID
td(on)
tr
ton
td(off)
tf
toff
t = 1 s
Duty Cycle
≤ 1 %
D.U.T.
RL
VDD
PG.
50
IG = 2 mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2724-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK2725(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2726(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK2727(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2729(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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