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参数资料
| 型号： | 2SK2724 |
| 元件分类： | JFETs |
| 英文描述： | 35 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 83K |
| 代理商： | 2SK2724 |
2SK2724
3
FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TC - Case Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
TC - Case Temperature - C
P
T
-
Total
Power
Dissipation
-
W
0
20
0
20
40
60
80
100
120
140
160
20
40
60
80
100
40
60
80
100
120
140
160
35
30
25
20
15
10
5
0
2
3
4
100
1
10
100
200
1
0
Pulsed
510
15
VGS = 20 V
VGS = 4 V
VGS = 10 V
Pulsed
Tch = –25 C
25 C
125 C
VDS = 10 V
1
10
100
1 000
0.1
1
10
100
ID(pulse) = 140 A
ID(DC)
= 35 A
Power
Dissipation
Limited(P
T =
30
W)
R
DS(on)
Limited
(V
GS
=
10
V)
PW
=
1
ms
PW
=
10
ms
PW
=
200
ms
Tc = 25 C
Single Pulse
1 000
PW
=
100
s
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2726-E | 7 A, 500 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2728-E | 18 A, 500 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2728 | 0.45 ohm, POWER, FET |
| 2SK2728 | 18 A, 500 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2729 | 0.29 ohm, POWER, FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2724-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK2725(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2726(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK2727(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2729(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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