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参数资料
| 型号： | 2SK2728 |
| 元件分类： | JFETs |
| 英文描述： | 0.45 ohm, POWER, FET |
| 封装： | SC-65, TO-3P, 3 PIN |
| 文件页数： | 4/10页 |
| 文件大小： | 48K |
| 代理商： | 2SK2728 |
2SK2728
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
500
—
V
I
D = 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
——V
I
G = ±100A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25V, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
AV
DS = 500 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.5
—
3.5
V
I
D = 1mA, VDS = 10V*
1
Static drain to source on state
resistance
R
DS(on)
—
0.38
0.45
I
D = 9A, VGS = 10V*
1
Forward transfer admittance
|y
fs|
8
13
—
S
I
D = 9A, VDS = 10V*
1
Input capacitance
Ciss
—
2150
—
pF
V
DS = 10V
Output capacitance
Coss
—
630
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
100
—
pF
f = 1MHz
Total gate charge
Qg
—
38
—
nc
V
DD = 400V
Gate to source charge
Qgs
—
10
—
nc
V
GS = 10V
Gate to drain charge
Qgd
—
13
—
nc
I
D = 18A
Turn-on delay time
t
d(on)
—
35
—
ns
V
GS = 10V, ID = 9A
Rise time
t
r
—
120
—
ns
R
L = 3.3
Turn-off delay time
t
d(off)
—
100
—
ns
Fall time
t
f
—65—
ns
Body to drain diode forward
voltage
V
DF
—
1.0
—
V
I
D = 18A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
380
—
ns
I
F = 18A, VGS = 0
diF/ dt = 100A/
s
Note:
1. Pulse test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2728 | 18 A, 500 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| 2SK2735L | 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2735S | 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2737 | 45 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2729(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2730-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) TO-3P Box 制造商:Renesas 功能描述:Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) TO-3P Box |
| 2SK2731T146 | 功能描述:MOSFET N-CH 30V 200MA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2733(F) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 900V 1A 3-Pin(3+Tab) TO-220 |
| 2SK2735L(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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