参数资料
型号: 2SK2735S
元件分类: JFETs
英文描述: 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: DPAK-3
文件页数: 1/11页
文件大小: 61K
代理商: 2SK2735S
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
相关PDF资料
PDF描述
2SK2737 45 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2744 45 A, 50 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2745 50 A, 50 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
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相关代理商/技术参数
参数描述
2SK2736(E) 制造商:Renesas Electronics Corporation 功能描述:
2SK2738(E) 制造商:Renesas Electronics 功能描述:Cut Tape
2SK2740 功能描述:MOSFET N-CH 600V 7A TO-220FN RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
2SK2744 功能描述:MOSFET N-CH 50V 45A TO-3PN RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
2SK2744(F) 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 50V 45A TO-3PN