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参数资料
| 型号： | 2SK2736-E |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220CFM, 3 PIN |
| 文件页数： | 7/7页 |
| 文件大小： | 88K |
| 代理商： | 2SK2736-E |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2738(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK2740 | 功能描述:MOSFET N-CH 600V 7A TO-220FN RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK2744 | 功能描述:MOSFET N-CH 50V 45A TO-3PN RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK2744(F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 50V 45A TO-3PN |
| 2SK2744F | 制造商:Toshiba America Electronic Components 功能描述:MOSFET |
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