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参数资料
| 型号： | 2SK2737 |
| 元件分类： | JFETs |
| 英文描述： | 45 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220CFM, 3 PIN |
| 文件页数： | 6/11页 |
| 文件大小： | 63K |
| 代理商： | 2SK2737 |
2SK2737
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
30
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
45
A
Drain peak current
I
D(pulse)
Note1
180
A
Body-drain diode reverse drain current
I
DR
45
A
Channel dissipation
Pch
Note2
30
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
30
——V
I
D = 10mA, VGS = 0
Gate to source breakdown voltage
V
(BR)GSS
±20
—
V
I
G = ±100A, VDS = 0
Gate to source leak current
I
GSS
—
±10
AV
GS = ±16V, VDS = 0
Zero gate voltege drain current
I
DSS
——10
AV
DS = 30 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1mA, VDS = 10V
Note3
Static drain to source on state
resistance
R
DS(on)
—
1014m
I
D = 20A, VGS = 10V
Note3
Static drain to source on state
resistance
R
DS(on)
—
1525m
I
D = 20A, VGS = 4V
Note3
Forward transfer admittance
|y
fs|
2030—
S
I
D = 20A, VDS = 10V
Note3
Input capacitance
Ciss
—
1570
—
pF
V
DS = 10V
Output capacitance
Coss
—
1100
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
410
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
32
—
ns
V
GS = 10V, ID = 20A
Rise time
t
r
—
300
—
ns
R
L = 0.5
Turn-off delay time
t
d(off)
—
180
—
ns
Fall time
t
f
—
200
—
ns
Body–drain diode forward voltage
V
DF
—
1.0
—
V
I
F = 45A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
75
—
ns
I
F = 45A, VGS = 0
diF/ dt = 50A/s
Note:
3. Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2738(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK2740 | 功能描述:MOSFET N-CH 600V 7A TO-220FN RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK2744 | 功能描述:MOSFET N-CH 50V 45A TO-3PN RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK2744(F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 50V 45A TO-3PN |
| 2SK2744F | 制造商:Toshiba America Electronic Components 功能描述:MOSFET |
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