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参数资料
| 型号： | 2SK2796S-E |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 5/10页 |
| 文件大小： | 76K |
| 代理商： | 2SK2796S-E |
2SK2796(L), 2SK2796(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
60
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
5A
Drain peak current
I
D(pulse)
Note1
20
A
Body-drain diode reverse drain current
I
DR
5A
Avalanche current
I
AP
Note3
5A
Avalanche energy
E
AR
Note3
2.14
mJ
Channel dissipation
Pch
Note2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
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相关代理商/技术参数 |
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| 2SK2796STL-E | 制造商:Renesas Electronics Corporation 功能描述: |
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