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参数资料
| 型号： | 2SK2796S-E |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 9/10页 |
| 文件大小： | 76K |
| 代理商： | 2SK2796S-E |
Data Sheet D12357EJ3V0DS
6
2SK2983
PACKAGE DRAWINGS (Unit: mm)
1)TO-220AB (MP-25)
2)TO-262 (MP-25 Fin Cut)
3)TO-263 (MP-25ZJ)
EQUIVALENT CIRCUIT
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP.
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
5.9
MIN.
6.0
MAX.
15.5
MAX.
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP.
8.5±
0.2
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0
.5
4
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
5.7±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
10 TYP.
0.5R
TYP.
0.8R
TYP.
2.8±0.2
5
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PDF描述 |
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| 2SK2826-ZJ | 70 A, 60 V, 0.0097 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
参数描述 |
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| 2SK2796STL-E | 制造商:Renesas Electronics Corporation 功能描述: |
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| 2SK2808-01MRSC-P | 制造商:Fuji Electric 功能描述: |
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