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参数资料
| 型号： | 2SK2826-Z-AZ |
| 元件分类： | JFETs |
| 英文描述： | 70 A, 60 V, 0.0097 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-220SMD, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 80K |
| 代理商： | 2SK2826-Z-AZ |
Data Sheet D11273EJ3V0DS
5
2SK2826
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
0
- 50
5
0
50
100
150
ID = 25 A
10
20
15
VGS = 10 V
VGS = 4.0 V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1.0
ISD
-
Diode
Forward
Current
-
A
0
1.5
VSD - Source to Drain Voltage - V
0.5
Pulsed
0.1
1
10
100
0 V
VGS = 10 V
1000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
100
0.1
1000
10000
100000
1
10
100
VGS = 0 V
f = 1 MHz
Coss
Crss
Ciss
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
10
0.1
100
1000
10000
110
tf
tr
td(on)
td(off)
100
VDD = 30 V
VGS = 10 V
RG = 10
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
IF - Drain Current - A
trr
-
Reverse
Recovery
Time
-
ns
di/dt = 100 A/
s
VGS = 0 V
1
0.1
10
1.0
10
100
1000
100
V
GS
-
Gate
to
Source
Voltage
-
V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
0
50
100
150
200
20
40
60
80
2
4
VDD = 48 V
30 V
12 V
VDS
6
8
VGS
5
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2826-ZJ | 70 A, 60 V, 0.0097 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK2826-S | 70 A, 60 V, 0.0097 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK2826-ZJ-AZ | 70 A, 60 V, 0.0097 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK2844 | 35 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2851 | 5000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2827-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK2835TP | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 200V 5A 3PIN TPS - Tape and Reel |
| 2SK2837 | 功能描述:MOSFET N-CH 500V 20A TO-3PN RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK2837(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-3PN 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 20A 3PIN 2-16C1C - Rail/Tube 制造商:Toshiba 功能描述:Nch 500V 20A 0.27@10V TO3P(N) Bulk |
| 2SK2837(Q,T) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-3PN T/R 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 20A TO-3PN |
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