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参数资料
| 型号： | 2SK2857-AZ |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 4000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 1/8页 |
| 文件大小： | 62K |
| 代理商： | 2SK2857-AZ |
1998,1999
MOS FIELD EFFECT TRANSISTOR
2SK2857
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
Document No. D11648EJ2V0DS00 (2nd edition)
Date Published March 1999 NS CP (K)
Printed in Japan
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
PACKAGE DRAWING (Unit : mm)
1
2
3
4.5±0.1
1.6±0.2
0.8MIN
.
2.5±0.1
4.0±0.25
0.42
±0.06
1.5
3.0
1.5±0.1
0.41
+0.03
-0.05
0.47
DESCRIPTION
The 2SK2857 is a switching device which can be driven directly
by a 5V power source.
The 2SK2857 features a low on-state resistance and excellent
Switching Characteristics, and is suitable for applications such as
actuator driver.
FEATURES
Can be driven by a 5V power source.
Low On-state resistance :
RDS(on)1 = 220 m
MAX. (VGS = 4 V, ID = 1.5 A)
RDS(on)2 = 150 m
MAX. (VGS = 10 V, ID = 2.5 A)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±4
A
Drain Current (pulse)
Note1
ID(pulse)
±16
A
Total Power Dissipation
Note2
PT
2W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Notes1. PW
≤ 10
s, Duty Cycle ≤ 1 %
2. Mounted on ceramic board of 16 cm
2
× 0.7 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device is actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
EQUIVALENT CIRCUIT
Source
Internal
Diode
Gate
Protection
Diode
Gate
Drain
Electrode
Connection
1.Souce
2.Drain
3.Gate
The mark
shows major revised points.
Marking : NX
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2864 | 20 A, 200 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2865(2-7B2B) | 2 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2869(L) | 0.07 ohm, POWER, FET |
| 2SK2869(L) | 0.07 ohm, POWER, FET |
| 2SK2884 | 5 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2857-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2857-T1-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SC-62 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SC-62 T/R |
| 2SK2858-T1(A) | 制造商:Renesas Electronics 功能描述:Nch 30V 100mA 5 SC70 Tape & Reel |
| 2SK2862 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 3A 3PIN TO-220(NIS) - Rail/Tube |
| 2SK2862(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-220NIS |
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