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参数资料
| 型号： | 2SK2857-AZ |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 4000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 3/8页 |
| 文件大小： | 62K |
| 代理商： | 2SK2857-AZ |
Data Sheet D11648EJ2V0DS00
3
2SK2857
TYPICAL CHARACTERISTICS (TA = 25°C)
30
150
60
90
20
60
80
40
0
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT
-
Der
ating
F
actor
-
%
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
10
100
ID
-
Drain
Current
-
A
1
VDS - Drain to Source Voltage - V
100
10
1
0.1
PW
=1
m
s
100
m
s
10
ms
R
DS(on)
Limited
(@V
GS
=1
0
V)
DC
TA = 25C
Single Pulse
Mounted on Ceramic
Board of 16cm x 0.7mm
2
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0.4
1.6
2.0
0.8
1.2
0.4
1.2
1.6
0.8
0
2.0
6 V
4 V
VGS = 2 V
8 V
1
23
10
1
0.1
0.01
5
4
20
75C
TA = 125C
VGS - Gate to Sorce Voltage - V
25C
VDS = 10 V
TRANSFER CHARACTERISTICS
ID
-
Drain
Current
-
A
1
10
0.1
1
0.1
VDS = 10 V
20
25 C
75 C
125 C
ID - Drain Current - A
|y
fs
|-
Forward
Transfer
Admittance
-
S
TA =
25 C
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1
0.1
10
20
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
0
TA = 125C
75C
25C
80
120
160
200
240
40
VGS = 4 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2857-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2857-T1-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SC-62 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SC-62 T/R |
| 2SK2858-T1(A) | 制造商:Renesas Electronics 功能描述:Nch 30V 100mA 5 SC70 Tape & Reel |
| 2SK2862 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 3A 3PIN TO-220(NIS) - Rail/Tube |
| 2SK2862(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-220NIS |
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