参数资料
型号: 2SK2917
元件分类: JFETs
英文描述: 18 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, 2-16F1B, 3 PIN
文件页数: 1/6页
文件大小: 423K
代理商: 2SK2917
2SK2917
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2917
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Low drain–source ON resistance
: RDS (ON) = 0.21 (typ.)
High forward transfer admittance
: |Yfs| = 17 S (typ.)
Low leakage current : IDSS = 100 A (max) (VDS = 500 V)
Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Drain–source voltage
VDSS
500
V
Drain–gate voltage (RGS = 20 k)
VDGR
500
V
Gate–source voltage
VGSS
±30
V
DC
(Note 1)
ID
18
Drain current
Pulse (Note 1)
IDP
72
A
Drain power dissipation (Ta
= 25°C)
PD
90
W
Single pulse avalanche energy
(Note 2)
EAS
915
mJ
Avalanche current
IAR
18
A
Repetitive avalanche energy (Note 3)
EAR
9
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch–c)
1.39
°C / W
Thermal resistance, channel to
ambient
Rth (ch–a)
41.6
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.8 mH, RG = 25 , IAR = 18 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
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相关代理商/技术参数
参数描述
2SK2917(F) 功能描述:MOSFET N-ch 500V 18A 0.27 ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2SK2917LB 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR PANASONIC
2SK2920 制造商:Toshiba America Electronic Components 功能描述:Part Number Only
2SK2925L-E 制造商:Renesas Electronics Corporation 功能描述:
2SK2925-S(TR-E) 制造商:Renesas Electronics Corporation 功能描述: