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参数资料
| 型号： | 2SK2919 |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 600 V, 4.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ZP, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 106K |
| 代理商： | 2SK2919 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6121
2SK2919
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21400TS (KOTO) TA-2283 No.6121–1/4
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Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2128
[2SK2919]
Features
Low ON resistance.
Ultrahigh-speed switching.
On-chip high-speed diode (trr=100ns).
C
Electrical Characteristics at Ta = 25C
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
Note ) Be careful in handling the 2SK2919 because it has no protection diode between Gate-to-Source.
Continued on next page.
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