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参数资料
| 型号： | 2SK2919 |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 600 V, 4.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ZP, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 106K |
| 代理商： | 2SK2919 |
2SK2919
No.6121–3/4
10
0
20
30
35
40
0
20
40
60
80
120
100
140
160
100ms
ID
SW Time - I D
A S O
PD - Tc
td(off)
tf
tr
td(on)
IDP
VDD=200V
VGS=10V
P.W=1
s
D.C
≤0.5%
<1
s
10
s
100
s
Operation in this area
is limited by RDS(on).
1ms
10ms
DC
operation
Ciss,Coss,Crss - VDS
Ciss
Coss
Crss
I F - VSD
Tc=75
°C
25
°C
-
25
°C
V GS(off) - Tc
1
2
3
4
5
0
-60
-40
-20
0
20
80
100
120
140
160
60
40
VDS=10V
ID=1mV
2
3
5
7
0.1
2
3
5
7
1.0
2
3
5
7
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
2
3
5
7
5
7
100
2
3
5
2
3
5
7
1000
10
0
4
8
12
16
20242832
VGS=0
f = 1MHz
2
3
5
7
1000
2
3
5
7
100
2
3
5
7
10
5
7
23
5
7
23
5
0.1
1.0
2
3
5
7
0.1
2
3
5
7
1.0
2
3
5
7
10
23
5
7
10
100
23
5
7
23
5
7
1000
Ciss,
Coss,
Crss
–
p
F
Drain-to-Source Voltage, VDS –V
Switching
Time,
SW
Time
–
n
s
Drain Current, ID –A
Tc=25
°C
Single pulse
Drain
Current
,I
D
–A
Drain-to-Source Voltage, VDS –V
Allowable
Power
Dissipation,
P
D
–W
Case Temperature, Tc – C
Cutoff
Voltage,
V
GS(off)
–V
Diode
Forward
Current,
I F
–A
Diode Forward Voltage, VSD –V
R DS(on) - Tc
ID=1A
1
2
3
4
5
6
7
0
-60
-40
-20
0
20
80
100
120
140
160
60
40
V GS
=20V
V GS
=10V
ID - Tc
1
2
3
4
5
0
-60
-40
-20
0
20
80
100
120
140
160
60
40
VDS=10V
VGS=10V
Drain
Current,
I D
–A
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
–
Case Temperature, Tc – C
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