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参数资料
| 型号： | 2SK292ST5L-E |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-63, DPAK-3 |
| 文件页数： | 4/9页 |
| 文件大小： | 95K |
| 代理商： | 2SK292ST5L-E |
2SK2925(L),2SK2925(S)
Rev.5.00 Sep 07, 2005 page 4 of 8
Case Temperature TC (°C)
Static Drain to Source on State
Resistance vs. Temperature
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Forward Transfer Admittance
vs. Drain Current
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Gate
to
Source
Voltage
V
GS
(V)
Switching Characteristics
Switching
Time
t
(ns)
Drain Current ID (A)
0.5
0.4
0.3
0.2
0.1
–40
0
40
80
120
160
0
0.1 0.2
1
5
20
2
5
1
0.5
2
ID = 10 A
VGS = 4 V
10 V
5 A
Pulse Test
10 A
10
2 A
2, 5 A
VDS = 10 V
Pulse Test
25
°C
Tc = –25
°C
75
°C
0.1
0.5
1
2
10
0.2
5
010
20
30
40
50
1000
200
500
100
10
20
50
100
80
60
40
20
0
20
16
12
8
4
8
12
16
20
0
1000
300
100
30
10
0.1
0.2
1
5
10
VDD = 50 V
25 V
10 V
500
200
100
20
50
10
5
ID = 10 A
VGS
VDS
3
1
0.5
2
20
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
VDD = 50 V
25 V
10 V
tr
VGS = 10 V, VDD = 30 V
PW = 5
s, duty < 1 %
tf
td(on)
td(off)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2930-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 35A 3-Pin(3+Tab) TO-220AB Box |
| 2SK2931-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 45A 3-Pin(3+Tab) TO-220AB Box |
| 2SK2933-E | 制造商:Renesas Electronics 功能描述:60V 15A TO3 Cut Tape |
| 2SK2934(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2935(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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