参数资料
型号: 2SK292ST5L-E
元件分类: JFETs
英文描述: 10 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: SC-63, DPAK-3
文件页数: 5/9页
文件大小: 95K
代理商: 2SK292ST5L-E
2SK2925(L),2SK2925(S)
Rev.5.00 Sep 07, 2005 page 5 of 8
Pulse Width
PW (S)
Normalized
Transient
Thermal
Impedance
γ s
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
Channel Temperature Tch (
°C)
Repetitive
Avalanche
Energy
E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Source to Drain Voltage
VSD (V)
Reverse
Drain
Current
I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
D. U. T
Rg
IAP
Monitor
VDS
Monitor
VDD
50
Vin
15 V
0
ID
VDS
IAP
V(BR)DSS
L
VDD
EAR =
L I
AP
2
2
1
VDSS
VDSS – VDD
Avalanche Test Circuit
Avalanche Waveform
0
0.4
0.8
1.2
1.6
2.0
25
50
75
100
125
150
0
VGS = 0, –5 V
10 V
5 V
20
16
12
8
4
Pulse Test
10
8
6
4
2
IAP= 10 A
VDD = 25 V
duty < 0.1 %
Rg > 50
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
DM
P
PW
T
D =
PW
T
ch – c(t) = s (t)
ch – c
ch – c = 6.25
°C/W, Tc = 25°C
θ
γ
θ
D = 1
0.5
0.2
0.01
0.02
0.1
0.05
1 shot
Pulse
Tc = 25
°C
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