参数资料
型号: 2SK2952
元件分类: JFETs
英文描述: 8.5 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: 2-10R1B, SC-67, 3 PIN
文件页数: 2/6页
文件大小: 415K
代理商: 2SK2952
2SK2952
2004-07-06
2
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
A
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 A, VDS = 0 V
±30
V
Drain cutoff current
IDSS
VDS = 400 V, VGS = 0 V
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
400
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 5 A
0.4
0.55
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 5 A
4.0
8.0
S
Input capacitance
Ciss
1340
Reverse transfer capacitance
Crss
160
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
490
pF
Rise time
tr
22
Turnon time
ton
60
Fall time
tf
32
Switching time
Turnoff time
toff
140
ns
Total gate charge (gatesource
plus gatedrain)
Qg
34
Gatesource charge
Qgs
18
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 320 V, VGS = 10 V, ID = 8.5 A
16
nC
SourceDrain Ratings and Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
8.5
A
Pulse drain reverse current
(Note 1)
IDRP
34
A
Forward voltage (diode)
VDSF
IDR = 8.5 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
350
ns
Reverse recovery charge
Qrr
IDR = 8.5 A, VGS = 0 V
dIDR/dt = 100 A/s
2.6
C
Marking
Lot No.
(weekly code)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K2952
Part No. (or abbreviation code)
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相关代理商/技术参数
参数描述
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2SK2953 功能描述:MOSFET N-Ch 600V 15A Rdson 0.4 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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