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参数资料
| 型号： | 2SK2967 |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 250 V, 0.068 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-16C1B, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 416K |
| 代理商： | 2SK2967 |
2SK2967
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2967
DCDC Converter, Relay Drive and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 48 m (typ.)
High forward transfer admittance
: |Yfs| = 30 S (typ.)
Low leakage current : IDSS = 100 A (max) (VDS = 250 V)
Enhancement mode
: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
250
V
Draingate voltage (RGS = 20 k)
VDGR
250
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
30
A
Drain current
Pulse (Note 1)
IDP
120
A
Drain power dissipation (Tc = 25°C)
PD
150
W
Single pulse avalanche energy
(Note 2)
EAS
925
mJ
Avalanche current
IAR
30
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
0.833
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
50
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.74 mH, IAR = 30 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
相关PDF资料 |
PDF描述 |
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| 2SK2980ZZ-TL-E | 1000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2981-Z | 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 2SK2981 | 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 2SK2983-ZJ | 30 A, 30 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK2983-S | 30 A, 30 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2967(F) | 制造商:Toshiba 功能描述:Nch 250V 30A 0.068@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 250V 30A TO-3PN 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Nch,250V/30A/0.068ohm,TO-3P(N) 制造商:Toshiba 功能描述:Trans MOSFET N-CH 250V 30A 3-Pin(3+Tab) TO-3PN |
| 2SK2967F | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 250V 30A 3-Pin(3+Tab) TO-3PN |
| 2SK2968 | 功能描述:MOSFET N-Ch 900V 10A Rdson 1.25 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2968(F) | 制造商:Toshiba 功能描述:Nch 900V 10A 1.25@10V TO3P(N) 制造商:Toshiba 功能描述:Nch 900V 10A 1.25@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 10A TO-3PN 制造商:Toshiba 功能描述:Trans MOSFET N-CH 900V 10A 3-Pin(3+Tab) TO-3PN |
| 2SK2968(F,T) | 功能描述:MOSFET N-Ch 900V 10A Rdson 1.25 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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