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参数资料
| 型号： | 2SK2967 |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 250 V, 0.068 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-16C1B, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 416K |
| 代理商： | 2SK2967 |
2SK2967
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
A
Drain cutoff current
IDSS
VDS = 250 V, VGS = 0 V
—
100
A
Drainsource breakdown
voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
250
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
—
3.5
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 15 A
—
48
68
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 15 A
15
30
—
S
Input capacitance
Ciss
—
5400
—
Reverse transfer capacitance
Crss
—
580
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
1900
—
pF
Rise time
tr
—
20
—
Turnon time
ton
—
50
—
Fall time
tf
—
35
—
Switching time
Turnoff time
toff
—
200
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
132
—
Gatesource charge
Qgs
—
80
—
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 200 V, VGS = 10 V, ID = 30 A
—
52
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
30
A
Pulse drain reverse current
(Note 1)
IDRP
—
120
A
Forward voltage (diode)
VDSF
IDR = 30 A, VGS = 0 V
—
2.0
V
Reverse recovery time
trr
—
270
—
ns
Reverse recovery charge
Qrr
IDR = 30 A, VGS = 0 V
dIDR / dt = 100 A / s
—
3.0
—
C
Marking
K2967
TOSHIBA
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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PDF描述 |
|---|---|
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| 2SK2981-Z | 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 2SK2981 | 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 2SK2983-ZJ | 30 A, 30 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK2983-S | 30 A, 30 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2967(F) | 制造商:Toshiba 功能描述:Nch 250V 30A 0.068@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 250V 30A TO-3PN 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Nch,250V/30A/0.068ohm,TO-3P(N) 制造商:Toshiba 功能描述:Trans MOSFET N-CH 250V 30A 3-Pin(3+Tab) TO-3PN |
| 2SK2967F | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 250V 30A 3-Pin(3+Tab) TO-3PN |
| 2SK2968 | 功能描述:MOSFET N-Ch 900V 10A Rdson 1.25 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2968(F) | 制造商:Toshiba 功能描述:Nch 900V 10A 1.25@10V TO3P(N) 制造商:Toshiba 功能描述:Nch 900V 10A 1.25@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 10A TO-3PN 制造商:Toshiba 功能描述:Trans MOSFET N-CH 900V 10A 3-Pin(3+Tab) TO-3PN |
| 2SK2968(F,T) | 功能描述:MOSFET N-Ch 900V 10A Rdson 1.25 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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