参数资料
型号: 2SK2983-ZJ
元件分类: JFETs
英文描述: 30 A, 30 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
封装: TO-263, 3 PIN
文件页数: 2/8页
文件大小: 99K
代理商: 2SK2983-ZJ
Data Sheet D12357EJ3V0DS
2
2SK2983
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
RDS(on)1
VGS = 10 V, ID = 15 A
13.0
20.0
m
Drain to Source On-state Resistance
RDS(on)2
VGS = 4.5 V, ID = 15 A
18.0
27.0
m
Gate to Source Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 15 A
9.0
19
S
Drain Leakage Current
IDSS
VDS = 30 V, VGS = 0 V
10
A
Gate to Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
A
Input Capacitance
Ciss
1300
pF
Output Capacitance
Coss
530
pF
Reverse Transfer Capacitance
Crss
VDS = 10 V
VGS = 0 V
f = 1 MHz
250
pF
Turn-on Delay Time
td(on)
50
ns
Rise Time
tr
820
ns
Turn-off Delay Time
td(off)
100
ns
Fall Time
tf
ID = 15 A
VGS(on) = 10 V
VDD = 15 V
RG = 10
170
ns
Total Gate Charge
QG
30
nC
Gate to Source Charge
QGS
4.5
nC
Gate to Drain Charge
QGD
ID = 30 A
VDD = 24 V
VGS = 10 V
7.5
nC
Body Diode Forward Voltage
VF(S-D)
IF = 30 A, VGS = 0 V
0.8
V
Reverse Recovery Time
trr
35
ns
Reverse Recovery Charge
Qrr
IF = 30 A, VGS = 0 V
di/dt = 100 A /
s
65
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS(on)
10%
0
ID
90%
td(on)
tr
td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
相关PDF资料
PDF描述
2SK2983-S 30 A, 30 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
2SK2984-S 40 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
2SK2984-ZJ 40 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK2984-S 40 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
2SK2991(2-10S1B) 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
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