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参数资料
| 型号： | 2SK2984-S |
| 元件分类： | JFETs |
| 英文描述： | 40 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | TO-262, 3 PIN |
| 文件页数： | 6/10页 |
| 文件大小： | 234K |
| 代理商： | 2SK2984-S |
3
2SK2984
Data Sheet D12356EJ3V0DS
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TC - Case Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
0
20
40
60
80
100
120 140
160
20
40
60
80
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
TC - Case Temperature - C
P
T
-
Total
Power
Dissipation
-
W
0
20
40
60
80
100
120 140
160
70
60
50
40
30
20
10
FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
1
0.1
10
100
1000
1
10
100
TC = 25C
Single Pulse
PW
=
1
ms
Power
Dissipation
Limited
DC
100
ms
ID(DC)
10
ms
ID(pulse)
R
DS(on)
Limited
(at
V
GS
=10
V)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0
1.0
1.5
2.0
100
125
0.5
Pulsed
VGS =10 V
75
50
25
4.5 V
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
1
10
100
1000
Pulsed
0
2
4
68
VDS = 10 V
Tch =
25C
125C
ID
-
Drain
Current
-
A
5
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2984-ZJ | 40 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK2984-S | 40 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
| 2SK2991(2-10S1B) | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK300-4 | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 2SK300-3 | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2985 | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 60V 45A 3-Pin(3+Tab) TO-220NIS |
| 2SK2986 | 制造商:Toshiba 功能描述:Nch 60V 55A TO220FL/SM Cut Tape |
| 2SK2989 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 50V 5A 3PIN L-STM - Bulk |
| 2SK2989(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 50V 5A 3-Pin TO-92 Mod |
| 2SK2989(F,M) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 50V 5A TO-92 |
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