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参数资料
| 型号： | 2SK2984-S |
| 元件分类： | JFETs |
| 英文描述： | 40 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
| 封装： | TO-262, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 105K |
| 代理商： | 2SK2984-S |
2SK1669
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
250
V
Gate to source voltage
V
GSS
±30
V
Drain current
I
D
30
A
Drain peak current
I
D(pulse)*
1
120
A
Body to drain diode reverse drain current
I
DR
30
A
Channel dissipation
Pch*
2
125
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes
1. PW 10 s, duty cycle 1%
2. Value at T
C = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
250
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
A
V
DS = 200 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.075
0.095
I
D = 15 A, VGS = 10 V *
1
Forward transfer admittance
|y
fs|
1220—
S
I
D = 15 A, VDS = 10 V *
1
Input capacitance
Ciss
—
3100
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
1330
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
190
—
pF
Turn-on delay time
t
d(on)
—
45
—
ns
I
D = 15 A, VGS = 10 V,
Rise time
t
r
—
170
—
ns
R
L = 2
Turn-off delay time
t
d(off)
—
270
—
ns
Fall time
t
f
—
150
—
ns
Body to drain diode forward
voltage
V
DF
—
1.0
—
V
I
F = 30 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
90
—
ns
I
F = 30 A, VGS = 0,
di
F/dt = 100 A/s
Note
1. Pulse test
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