参数资料
型号: 2SK2989
元件分类: 小信号晶体管
英文描述: 5000 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封装: LEAD FREE, 2-5J1C, TO-92MOD, 3 PIN
文件页数: 1/6页
文件大小: 236K
代理商: 2SK2989
2SK2989
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSVI)
2SK2989
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 120 m (typ.)
High forward transfer admittance
: |Yfs| = 2.6 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 50 V)
Enhancementmode
: Vth = 1.0 to 2.2 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
50
V
Draingate voltage (RGS = 20 k)
VDGR
50
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
5
Drain current
Pulse (Note 1)
IDP
15
A
Drain power dissipation
PD
0.9
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
Rth (cha)
138
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1C
Weight: 0.36 g (typ.)
相关PDF资料
PDF描述
2SK2992 1000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK2995 30 A, 250 V, 0.068 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3054-A 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK3055-AZ 30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3070L-E 75 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET
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