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参数资料
| 型号： | 2SK3070L-E |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LDPAK-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 94K |
| 代理商： | 2SK3070L-E |
Rev.9.00 Sep 07, 2005 page 1 of 8
2SK3070(L), 2SK3070(S)
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1063-0900
(Previous: ADE-208-684G)
Rev.9.00
Sep 07, 2005
Features
Low on-resistance
RDS(on) =4.5 m
typ.
Low drive current
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
G
D
S
1
2
3
4
1
2
3
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3070S | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3070STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3072 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3072-TB-E | 制造商:SANYO 功能描述:Nch 450V 0.03A 275 bo Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 450V 0.03A TO-253 |
| 2SK3074 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER) |
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