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参数资料
| 型号： | 2SK3070L-E |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LDPAK-3 |
| 文件页数： | 4/4页 |
| 文件大小： | 94K |
| 代理商： | 2SK3070L-E |
2SK3070(L), 2SK3070(S)
Rev.9.00 Sep 07, 2005 page 4 of 8
Case Temperature TC (°C)
Static Drain to Source on State
Resistance vs. Temperature
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(m
)
Forward Transfer Admittance
vs. Drain Current
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Gate
to
Source
Voltage
V
GS
(V)
Switching Characteristics
Switching
Time
t
(ns)
Drain Current ID (A)
20
16
12
8
4
–50
0
50
100
150
200
0
VGS = 10 V
4 V
Pulse Test
10, 20, 50 A
ID = 50 A
10, 20 A
0.1
0.3
1
3
10
30
100
500
100
200
20
50
10
2
5
1
0.5
Tc = –25
°C
75
°C
25
°C
VDS = 10 V
Pulse Test
0.1
0.3
1
3
10
30
100
010
20
30
40
50
1000
10000
3000
100
80
60
40
20
0
20
16
12
8
4
80
160
240
320
400
0
1000
100
200
20
10
0.1 0.2
2
10
100
1000
500
100
200
20
50
10
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
300
20
1
100
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
ID = 75 A
VGS
VDS
VDD = 40 V
25 V
10 V
0.5
5
500
50
VGS = 10 V, VDD = 30 V
PW = 5
s, duty < 1 %
tr
td(on)
td(off)
tf
30000
VDD = 40 V
25 V
10 V
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| 2SK3072-TB-E | 制造商:SANYO 功能描述:Nch 450V 0.03A 275 bo Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 450V 0.03A TO-253 |
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