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参数资料
| 型号： | 2SK3012 |
| 元件分类： | JFETs |
| 英文描述： | 16 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MTO-3P, 3 PIN |
| 文件页数： | 3/11页 |
| 文件大小： | 344K |
| 代理商： | 2SK3012 |
2SJ479(L), 2SJ479(S)
9
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相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3013 | 16 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3017 | 8.5 A, 900 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3019TL | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK301P | 30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK0301S | 30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3013 | 制造商:SHINDENGEN 制造商全称:Shindengen Electric Mfg.Co.Ltd 功能描述:VX-2 Series Power MOSFET(600V 16A) |
| 2SK3017 | 功能描述:MOSFET N-CH 900V 8.5A TO-3PN RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3017(F) | 功能描述:MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3017_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications |
| 2SK3017_09 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:DC−DC Converter, Relay Drive and Motor Drive Applications |
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