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参数资料
| 型号： | 2SK3017 |
| 元件分类： | JFETs |
| 英文描述： | 8.5 A, 900 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 2-16F1B, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 417K |
| 代理商： | 2SK3017 |
2SK3017
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
—
±10
A
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 A, VDS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 720 V, VGS = 0 V
—
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
900
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 4 A
—
1.05
1.25
Forward transfer admittance
|Yfs|
VDS = 15 V, ID = 4 A
3.5
7.0
—
S
Input capacitance
Ciss
—
2150
—
Reverse transfer capacitance
Crss
—
35
—
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
—
220
—
pF
Rise time
tr
—
25
—
Turnon time
ton
—
60
—
Fall time
tf
—
25
—
Switching time
Turnoff time
toff
—
120
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
70
—
Gatesource charge
Qgs
—
37
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 8 A
—
33
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
8.5
A
Pulse drain reverse current
(Note 1)
IDRP
—
25.5
A
Forward voltage (diode)
VDSF
IDR = 8.5 A, VGS = 0 V
—
1.9
V
Reverse recovery time
trr
—
1300
—
ns
Reverse recovery charge
Qrr
IDR = 8.5 A, VGS = 0 V
dIDR / dt = 100 A / s
—
14.5
—
C
Marking
K3017
TOSHIBA
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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PDF描述 |
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| 2SK0301S | 30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3017(F) | 功能描述:MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3017_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications |
| 2SK3017_09 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:DC−DC Converter, Relay Drive and Motor Drive Applications |
| 2SK3018 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK3018_1 | 制造商:ROHM 制造商全称:Rohm 功能描述:2.5V Drive Nch MOS FET |
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