参数资料
型号: 2SK3018T106
厂商: Rohm Semiconductor
文件页数: 4/4页
文件大小: 0K
描述: MOSFET N-CH 30V .1A SOT-323
产品目录绘图: xT106 Series SOT-323
特色产品: ECOMOS? Series MOSFETs
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 100mA
开态Rds(最大)@ Id, Vgs @ 25° C: 8 欧姆 @ 10mA,4V
Id 时的 Vgs(th)(最大): 1.5V @ 100µA
输入电容 (Ciss) @ Vds: 13pF @ 5V
功率 - 最大: 200mW
安装类型: 表面贴装
封装/外壳: SC-70,SOT-323
供应商设备封装: UMT3
包装: 标准包装
产品目录页面: 1638 (CN2011-ZH PDF)
其它名称: 2SK3018T106DKR
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
相关PDF资料
PDF描述
2SK3019TL MOSFET N-CH 30V .1A SOT416
2SK3479-Z-E2-AZ MOSFET 100V N-CH TO-263
2SK3480-AZ MOSFET N-CH 100V MP-25/TO-220
2SK3481-AZ MOSFET N-CH 100V MP-25/TO-220
2SK3482-AZ MOSFET N-CH 100V MP-3/TO-251
相关代理商/技术参数
参数描述
2SK3018-TP 功能描述:N-CHANNEL MOSFET, SOT-323 PACKAG 制造商:micro commercial co 系列:- 包装:剪切带(CT) 零件状态:在售 FET 类型:N 沟道 技术:MOSFET(金属氧化物) 漏源电压(Vdss):30V 电流 - 连续漏极(Id)(25°C 时):100mA(Ta) 驱动电压(最大 Rds On,最小 Rds On):2.5V 不同 Id 时的 Vgs(th)(最大值):1.5V @ 100μA Vgs(最大值):±20V 不同 Vds 时的输入电容(Ciss)(最大值):13pF @ 5V FET 功能:- 功率耗散(最大值):200mW(Ta) 不同?Id,Vgs 时的?Rds On(最大值):8 欧姆 @ 10mA,4V 工作温度:-55°C ~ 150°C 安装类型:表面贴装 供应商器件封装:SOT-323 封装/外壳:SC-70,SOT-323 标准包装:1
2SK3018UB 制造商:ROHM 制造商全称:Rohm 功能描述:2.5V Drive Nch MOSFET
2SK3018W 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:N-Channel POWER MOSFET
2SK3018WT1 制造商:WILLAS 制造商全称:WILLAS 功能描述:SOT-323 Plastic-Encapsulate MOSFETS
2SK3019 制造商:ROHM 制造商全称:Rohm 功能描述:Small switching (30V, 0.1A)