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参数资料
| 型号： | 2SK3047 |
| 厂商： | PANASONIC CORP |
| 元件分类： | JFETs |
| 英文描述： | Silicon N-Channel Power F-MOS FET |
| 中文描述： | 2 A, 800 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220D-A1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 44K |
| 代理商： | 2SK3047 |
1
Power F-MOS FETs
2SK3047
Silicon N-Channel Power F-MOS FET
unit: mm
I
Features
G
Avalanche energy capacity guaranteed: EAS > 15mJ
G
V
GSS
= ±30V guaranteed
G
High-speed switching: t
f
= 25ns
G
No secondary breakdown
I
Applications
G
Contactless relay
G
Diving circuit for a solenoid
G
Driving circuit for a motor
G
Control equipment
G
Switching power supply
I
Electrical Characteristics
(T
C
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Conditions
V
DS
= 640V, V
GS
= 0
V
GS
= ±30V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 1A
V
DS
= 25V, I
D
= 1A
I
DR
= 2A, V
GS
= 0
V
DS
= 20V, V
GS
= 0, f = 1MHz
V
GS
= 10V, I
D
= 1A
V
DD
= 200V, R
L
= 200
min
800
2
0.7
typ
4.8
1.1
350
60
25
15
20
60
25
max
0.1
±1
5
7
1.3
Unit
mA
μ
A
V
V
S
V
pF
pF
pF
ns
ns
ns
ns
I
Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25°C
Ta = 25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
800
±30
±2
±4
15
30
2
150
55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
*
L = 5mH, I
L
= 2.45A, V
DD
= 50V, 1 pulse
1
9.9±0.3
1
1
4
4.6±0.2
2.9±0.2
0.8±0.1
1.4±0.2
1.6±0.2
2
3
φ
3.2±0.1
2.6±0.1
0.55±0.15
2.54±0.3
5.08±0.5
3
1: Gate
2: Drain
3: Source
TO-220D Package
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3048 | 功能描述:MOSFET N-CH 600V 3A TO-220D RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3049 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK304C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 30V V(BR)DSS | 600UA I(DSS) | SPAK |
| 2SK304D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 30V V(BR)DSS | 1.2MA I(DSS) | SPAK |
| 2SK304E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 30V V(BR)DSS | 2.5MA I(DSS) | SPAK |
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