参数资料
型号: 2SK3059-AZ
元件分类: JFETs
英文描述: 50 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: MP-45F, ISOLATED TO-220, 3 PIN
文件页数: 1/8页
文件大小: 67K
代理商: 2SK3059-AZ
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confirm that this is the latest version.
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1999,2001
MOS FIELD EFFECT TRANSISTOR
2SK3059
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D13098EJ3V0DS00 (3rd edition)
Date Published
April 2001 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3059 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low on-state resistance
RDS(on)1 = 13 m
MAX. (VGS = 10 V, ID = 25 A)
RDS(on)2 = 20 m
MAX. (VGS = 4.0 V, ID = 25 A)
Low Ciss: Ciss = 2400 pF TYP.
Built-in gate protection diode
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
±20
V
Gate to Source Voltage (VDS = 0 V)
VGSS(DC)
+20,
10
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±50
A
Drain Current (Pulse)
Note1
ID(pulse)
±200
A
Total Power Dissipation (TC = 25°C)
PT
30
W
Total Power Dissipation (TA = 25°C)
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
25
A
Single Avalanche Energy
Note2
EAS
62.5
mJ
Notes 1. PW
≤ 10
s, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25
, VGS = 20
→ 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3059
Isolated TO-220
(Isolated TO-220)
The mark 5 shows major revised points.
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2SK3061 70 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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