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参数资料
| 型号： | 2SK3059-AZ |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 67K |
| 代理商： | 2SK3059-AZ |
Data Sheet D13098EJ3V0DS
3
2SK3059
TYPICAL CHARACTERISTICS (TA = 25°C)
5
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TC - Case Temperature -
°C
dT
-
Percentage
of
Rated
Power
-
%
0
25
50
75
100 125 150 175 200
20
40
60
80
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
TC - Case Temperature -
°C
P
T
-
Total
Power
Dissipation
-
W
0
25
50
75
100 125 150 175 200
70
60
50
40
30
20
10
FORWARD BIAS SAFE OPERATING AREA
ID
-
Drain
Current
-
A
VDS - Drain to Source Voltage - V
1
10
100
0.1
1
10
TC = 25C
Single Pulse
0.1
100
1000
ID(pulse)
P
W =
10
s
100
s
1 ms
10
ms
100
ms
Po
wer
Dissipation
Limited
DC
RDS(on)
LimitedID(DC)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
rth(t)
-
Transient
Thermal
Resistance
-
C/
W
10
0.001
0.01
0.1
1
100
1000
1 m10 m
100 m
1
10
100
1000
10
100
Rth(ch-C)= 4.17C/W
Rth(ch-A)= 62.5C/W
Single Pulse
TC= 25C/W
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PDF描述 |
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| 2SK3061 | 70 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3061-AZ | 70 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3065T100 | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3081-E | 45 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3082S | 10 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3060 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SK3060 Data Sheet | Data Sheet[04/2001] |
| 2SK3060-S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 70A I(D) | TO-262AA |
| 2SK3060-Z | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 70A 3-Pin(2+Tab) TO-220 SMD |
| 2SK3060-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3061 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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