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参数资料
| 型号： | 2SK3075 |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | 2-5N1A, 4 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 157K |
| 代理商： | 2SK3075 |
2SK3075
2004-12-14
2
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Output Power
PO
7.5
—
W
Drain Efficiency
ηD
50
—
%
Power Gain
GP
VDS = 9.6V
Iidle = 50mA (VGS = adjust)
f = 520MHz, Pi = 500mW
11.7
—
dB
Gate Threshold Voltage
Vth
VDS = 9.6V, ID = 0.5mA
1.0
1.5
2.0
V
Drain Cut-off Current
IDSS
VDS = 20V, VGS = 0
—
10
A
Gate-Source Leakage Current
IGSS
VGS = 10V, VDS = 0
—
5
A
HANDLING PRECAUTION
When handling individual devices, be sure that working desks, human bodies and soldering iron are protected
against electrostatic electricity.
RF OUTPUT POWER TEST FIXTURE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3075(TE12L,Q) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:MOSF RF N CH 30V 5A PW-X |
| 2SK3075_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER |
| 2SK3076 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3076L | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3076S | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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